BSS192P

BSS192P H6327 vs BSS192PE6327 vs BSS192PE6327T

 
PartNumberBSS192P H6327BSS192PE6327BSS192PE6327T
DescriptionMOSFET P-Ch -250V -190mA SOT-89-3MOSFET P-CH 250V 0.19A SOT-89MOSFET P-CH 250V 0.19A SOT-89
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current190 mA--
Rds On Drain Source Resistance7.7 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge- 6.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length4.5 mm--
SeriesBSS192--
Transistor Type1 P-Channel--
Width2.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min190 mS--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time5.2 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns--
Typical Turn On Delay Time4.7 ns--
Part # AliasesBSS192PH6327FTSA1 SP001047642--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
BSS192PH6327FTSA1 MOSFET P-Ch -250V -190mA SOT-89-3
BSS192P H6327 MOSFET P-Ch -250V -190mA SOT-89-3
BSS192PE6327 MOSFET P-CH 250V 0.19A SOT-89
BSS192PH6327FTSA1 MOSFET P-CH 250V 0.19A SOT-89
BSS192PL6327HTSA1 MOSFET P-CH 250V 0.19A SOT-89
BSS192PE6327T MOSFET P-CH 250V 0.19A SOT-89
BSS192PH6327XTSA1 IGBT Transistors MOSFET SMALL SIGNAL+P-CH
Infineon Technologies
Infineon Technologies
BSS192PH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSS192P H6327 P-CH -250V -190mA 12Ohm SOT89
BSS192P 全新原装
BSS192P BSS192 全新原装
BSS192P L6327 MOSFET P-Ch -250V 190mA SOT-89-3
BSS192PL6327 全新原装
Top