 |  | | |
| PartNumber | CSD16411Q3 | CSD16411 | CSD16411Q3/BKN |
| Description | MOSFET N-Ch NexFET Power MOSFETs | ||
| Manufacturer | Texas Instruments | TI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VSON-CLIP-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 10 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 2.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | CSD16411Q3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Texas Instruments | - | - |
| Forward Transconductance Min | 30 S | - | - |
| Development Kit | TPS2592AAEVM-531, TPS2592BLEVM-531 | - | - |
| Fall Time | 3.1 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 6 ns | - | - |
| Typical Turn On Delay Time | 5.3 ns | - | - |
| Unit Weight | 0.001467 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Texas Instruments |
CSD16411Q3 | MOSFET N-Ch NexFET Power MOSFETs | |
| CSD16411 | 全新原装 | ||
| CSD16411Q3/BKN | 全新原装 | ||
| CSD16411Q3 | MOSFET N-CH 25V 56A 8-SON |