| PartNumber | DMN30H4D0L-7 | DMN30H4D0L-13 | DMN30H4D0LFDE-13 |
| Description | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | U-DFN2020-E-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 300 V | 300 V | - |
| Id Continuous Drain Current | 250 mA | 550 mA | - |
| Rds On Drain Source Resistance | 4 Ohms | 4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1.7 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 7.6 nC | 7.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 310 mW | 630 mW | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Series | DMN30 | DMN30 | DMN30 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 17.5 ns | 17.5 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.7 ns | 4.7 ns | - |
| Factory Pack Quantity | 3000 | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25.8 ns | 25.8 ns | - |
| Typical Turn On Delay Time | 4.9 ns | 4.9 ns | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000238 oz |
| Forward Transconductance Min | - | - | - |