 |  | | |
| PartNumber | DMN3150LW-7 | DMN3150LW-7-F | DMN3150LW |
| Description | MOSFET 0.35W 28V 1.6A | ||
| Manufacturer | Diodes Incorporated | - | DIODES |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 28 V | - | - |
| Id Continuous Drain Current | 1.6 A | - | - |
| Rds On Drain Source Resistance | 88 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 620 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 350 mW | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1 mm | - | - |
| Length | 2.15 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMN31 | - | DMN31 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 1.3 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 5.4 S | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000176 oz | - | 0.000212 oz |
| Package Case | - | - | SC-70, SOT-323 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-323 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 350mW |
| Drain to Source Voltage Vdss | - | - | 28V |
| Input Capacitance Ciss Vds | - | - | 305pF @ 5V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 1.6A (Ta) |
| Rds On Max Id Vgs | - | - | 88 mOhm @ 1.6A, 4.5V |
| Vgs th Max Id | - | - | 1.4V @ 250μA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 350 mW |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 1.6 A |
| Vds Drain Source Breakdown Voltage | - | - | 28 V |
| Rds On Drain Source Resistance | - | - | 88 mOhms |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN3150LW-7 | MOSFET 0.35W 28V 1.6A | |
| DMN3150LW-7-F | 全新原装 | ||
| DMN3150LW-7 | Darlington Transistors MOSFET 0.35W 28V 1.6A | ||
| DMN3150LW | 全新原装 |