 |  | | |
| PartNumber | F20W60C3-7100 | F20SC6M | F20WT-5DDR-E |
| Description | MOSFET Hi Switching Speed High Voltage | ||
| Manufacturer | Shindengen | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | MTO-3P-3 | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 190 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 87 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 75 W | - | - |
| Packaging | Tube | - | - |
| Brand | Shindengen | - | - |
| Forward Transconductance Min | 8.7 S | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 60 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 355 ns | - | - |
| Typical Turn On Delay Time | 32 ns | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Shindengen |
F20W60C3-7100 | MOSFET Hi Switching Speed High Voltage | |
| F20W60C3-7100 | IGBT Transistors MOSFET Hi Switching Speed High Voltage | ||
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