 | | |
| PartNumber | FCD600N60Z | FCD600N65S3R0 |
| Description | MOSFET 600V N-Channel MOSFET | MOSFET SUPERFET3 650V 10A 360 mOhm |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V |
| Id Continuous Drain Current | 7.4 A | 6 A |
| Rds On Drain Source Resistance | 600 mOhms | 600 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 30 V |
| Qg Gate Charge | 20 nC | 11 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 89 W | 54 W |
| Configuration | Single | Single |
| Tradename | SuperFET II | - |
| Packaging | Reel | Reel |
| Height | 2.39 mm | - |
| Length | 6.73 mm | - |
| Product | MOSFET | - |
| Series | FCD600N60Z | SuperFET3 |
| Transistor Type | 1 N-Channel | - |
| Width | 6.22 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor |
| Forward Transconductance Min | 6.7 S | 3.6 S |
| Fall Time | 8 ns | 14 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7 ns | 9 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 39 ns | 29 ns |
| Typical Turn On Delay Time | 13 ns | 11 ns |
| Unit Weight | 0.009184 oz | - |
| Channel Mode | - | Enhancement |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FCD600N60Z | MOSFET 600V N-Channel MOSFET | |
ON Semiconductor |
FCD600N65S3R0 | MOSFET SUPERFET3 650V 10A 360 mOhm | |
| FCD600N60Z | MOSFET N CH 600V 7.4A DPAK | ||
| FCD600N65S3R0 | SUPERFET3 650V DPAK PKG | ||
| FCD600N60 | 全新原装 | ||
| FCD600N60ZF | 全新原装 |