| PartNumber | FDB20N50F | FDB2532 | FDB2532-F085 |
| Description | MOSFET UF 500V 260MOHM F D2PAK | MOSFET 150V N-Channel QFET Trench | MOSFET 150V N-Channel PowerTrench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 150 V | 150 V |
| Id Continuous Drain Current | 20 A | 79 A | 79 A |
| Rds On Drain Source Resistance | 260 mOhms | 14 mOhms | 14 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | - | 4 V |
| Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
| Qg Gate Charge | 50 nC | - | 82 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 250 W | 310 W | 310 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | UniFET | PowerTrench | PowerTrench |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FDB20N50F | FDB2532 | FDB2532_F085 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 25 S | - | - |
| Fall Time | 60 ns | 17 ns | 17 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 120 ns | 30 ns | 30 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns | 39 ns | - |
| Typical Turn On Delay Time | 45 ns | 16 ns | - |
| Unit Weight | 0.062153 oz | 0.045856 oz | 0.046296 oz |
| Type | - | MOSFET | - |
| Part # Aliases | - | FDB2532_NL | FDB2532_F085 |
| Qualification | - | - | AEC-Q101 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
|
ON Semiconductor / Fairchild |
FDB2572 | MOSFET N-Channel UltraFET | |
| FDB2614 | MOSFET 200V N-Channel PowerTrench MOSFET | ||
| FDB20N50F | MOSFET UF 500V 260MOHM F D2PAK | ||
| FDB2552-F085 | MOSFET N-Chan PowerTrench MOSFET | ||
| FDB2532 | MOSFET 150V N-Channel QFET Trench | ||
| FDB2552 | MOSFET 150V N-Ch UltraFET Trench | ||
| FDB2532-F085 | MOSFET 150V N-Channel PowerTrench MOSFET | ||
| FDB2570 | MOSFET | ||
|
ON Semiconductor |
FDB2572 | Darlington Transistors MOSFET N-Channel UltraFET | |
| FDB20AN06A0 | MOSFET N-CH 60V 45A TO-263AB | ||
| FDB20N50F | MOSFET N-CH 500V 20A D2PAK | ||
| FDB24AN06LA0 | MOSFET N-CH 60V 40A TO-263AB | ||
| FDB2532 | MOSFET N-CH 150V 79A D2PAK | ||
| FDB2532-F085 | MOSFET N-CH 150V 79A D2PAK | ||
| FDB2552 | MOSFET N-CH 150V 37A TO-263AB | ||
| FDB2570 | MOSFET N-CH 150V 22A TO-263AB | ||
| FDB2614 | MOSFET N-CH 200V 62A D2PAK | ||
| FDB2670 | MOSFET N-CH 200V 19A TO-263AB | ||
| FDB2710 | MOSFET N-CH 250V 50A D2PAK | ||
| FDB2552-F085 | MOSFET N CH 150V 5A TO-263AB | ||
| FDB20AN06A0-NL | 全新原装 | ||
| FDB20AN06AD | 全新原装 | ||
| FDB20AN06AO | 全新原装 | ||
| FDB20AN06N | 全新原装 | ||
| FDB211 | 全新原装 | ||
| FDB2170 | 全新原装 | ||
| FDB24AN06AO | 全新原装 | ||
| FDB24AN06LA0-NL | 全新原装 | ||
| FDB24AN06LAO | 全新原装 | ||
| FDB2532 D2PAK ON | 全新原装 | ||
| FDB2532 NL | 全新原装 | ||
| FDB2532(FDI2532) | 全新原装 | ||
| FDB2532CT | 全新原装 | ||
| FDB2532TM-NL | 全新原装 | ||
| FDB2532_F085 | Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB2532-F085) | ||
| FDB2552 FAIRCHILD | 全新原装 | ||
| FDB2552-NL | 全新原装 | ||
| FDB2552_F085 | N-CHANNEL POWERTRENCH MOSFET | ||
| FDB2570-NL | 全新原装 | ||
| FDB2570FSC | 全新原装 | ||
| FDB2572-NL | 全新原装 | ||
| FDB2614DKR | 全新原装 | ||
| FDB2670-NL | 全新原装 | ||
| FDB2710 FSC 250V 50A | 全新原装 | ||
| FDB2710TM | 全新原装 | ||
| FDB27P06 | 全新原装 | ||
| FDB28N30 | 全新原装 | ||
| FDB2532-CUT TAPE | 全新原装 | ||
| FDB2552-CUT TAPE | 全新原装 | ||
| FDB2710-CUT TAPE | 全新原装 |