 |  | | |
| PartNumber | FDB28N30TM | FDB2N80 | FDB28N30TM-CUT TAPE |
| Description | MOSFET 300V N-Channel | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 300 V | - | - |
| Id Continuous Drain Current | 28 A | - | - |
| Rds On Drain Source Resistance | 108 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | UniFET | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDB28N30TM | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 69 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 135 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 79 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Unit Weight | 0.046296 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB28N30TM | MOSFET 300V N-Channel | |
ON Semiconductor |
FDB28N30TM | MOSFET N-CH 300V 28A D2PAK | |
| FDB2N80 | 全新原装 | ||
| FDB28N30TM-CUT TAPE | 全新原装 |