 | | | |
| PartNumber | FDD86367-F085 | FDD86326 | FDD86367 |
| Description | MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET | MOSFET 80V N-Channel PowerTrench MOSFET | MOSFET MV7 80/20V 1000A N-chanPwrTrnchMOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
| Id Continuous Drain Current | 100 A | 37 A | 100 A |
| Rds On Drain Source Resistance | 8.4 mOhms | 23 mOhms | 3.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3.1 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 68 nC | 7.6 nC | 88 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
| Pd Power Dissipation | 227 W | 62 W | 227 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 2.39 mm | 2.39 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Series | FDD86367_F085 | FDD86326 | FDD86367 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 16 ns | - | 16 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 49 ns | - | 49 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 36 ns | - | 36 ns |
| Typical Turn On Delay Time | 20 ns | - | 20 ns |
| Part # Aliases | FDD86367_F085 | - | - |
| Unit Weight | 0.009184 oz | 0.009184 oz | 0.009184 oz |
| Tradename | - | PowerTrench | - |
| Forward Transconductance Min | - | 21 S | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD86367-F085 | MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET | |
| FDD86369-F085 | MOSFET 80V 90A Dual DPAK N-Chnl PowerTrench | ||
| FDD86326 | MOSFET 80V N-Channel PowerTrench MOSFET | ||
| FDD86380-F085 | MOSFET MV780/20V1000AMOSFET N-channelPowerTrench | ||
| FDD86367 | MOSFET MV7 80/20V 1000A N-chanPwrTrnchMOSFET | ||
| FDD86381-F085 | MOSFET 80/20V 1000A N-chnl PowerTrench MOSFET | ||
ON Semiconductor |
FDD86326 | MOSFET N-CH 80V TRENCH DPAK | |
| FDD86367 | MOSFET N-CHANNEL 80V 100A TO252 | ||
| FDD86369 | MOSFET N-CHANNEL 80V 90A TO252 | ||
| FDD86367-F085 | MOSFET N-CH 80V 100A DPAK | ||
| FDD86380-F085 | MOSFET N-CH 80V 50A DPAK | ||
| FDD86369-F085 | MOSFET N-CH 80V 90A DPAK | ||
| FDD86381-F085 | MOSFET N-CH 80V 25A DPAK | ||
| FDD86380_F085 | MV7 80/20V 1000A N-CHANNEL POW |