 |  | | |
| PartNumber | FDI33N25TU | FDI32N12 | FDI33N25 |
| Description | MOSFET TBD | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 33 A | - | - |
| Rds On Drain Source Resistance | 77 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 235 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 7.88 mm | - | - |
| Length | 10.29 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 26.6 S | - | - |
| Fall Time | 120 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 230 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Unit Weight | 0.084199 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDI3632 | MOSFET 100V 80a 0.009 Ohms/VGS=10V | |
| FDI33N25TU | MOSFET TBD | ||
| FDI32N12 | 全新原装 | ||
| FDI33N25 | 全新原装 | ||
| FDI3532 | 全新原装 | ||
ON Semiconductor |
FDI33N25TU | MOSFET N-CH 250V 33A I2PAK | |
| FDI3632 | MOSFET N-CH 100V 80A TO-262AB | ||
| FDI3652 | MOSFET N-CH 100V 61A TO-262AA |