FDN5632N-F

FDN5632N-F085 vs FDN5632N-F085 , 1N5251B vs FDN5632N-F085-CUT TAPE

 
PartNumberFDN5632N-F085FDN5632N-F085 , 1N5251BFDN5632N-F085-CUT TAPE
DescriptionMOSFET Trans MOS N-Ch 60V 1.7A
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.6 A--
Rds On Drain Source Resistance98 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameUltraFET--
PackagingReel--
Height1.12 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDN5632N_F085--
Transistor Type1 N-Channel--
TypePower Trench MOSFET--
Width1.4 mm--
BrandON Semiconductor / Fairchild--
Fall Time1.3 ns--
Product TypeMOSFET--
Rise Time1.7 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time5.2 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesFDN5632N_F085--
Unit Weight0.001058 oz--
制造商 型号 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDN5632N-F085 MOSFET Trans MOS N-Ch 60V 1.7A
ON Semiconductor
ON Semiconductor
FDN5632N-F085 MOSFET N-CH 60V 1.7A SSOT3
FDN5632N-F085 , 1N5251B 全新原装
FDN5632N-F085-CUT TAPE 全新原装
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