FF7 stock, FF7, FF75R12RT4


PartNumber	FF75R12RT4	FF75R12YT3	FF75R12RT4HOSA1
Description	IGBT Modules IGBT 1200V 75A	IGBT Modules N-CH 1.2KV 100A	IGBT MODULE VCES 1200V 75A
Manufacturer	Infineon	Infineon	-
Product Category	IGBT Modules	IGBT Modules	-
Product	IGBT Silicon Modules	IGBT Silicon Modules	-
Configuration	Dual	Dual	-
Collector Emitter Voltage VCEO Max	1200 V	1200 V	-
Collector Emitter Saturation Voltage	2.15 V	-	-
Continuous Collector Current at 25 C	75 A	100 A	-
Gate Emitter Leakage Current	100 nA	-	-
Pd Power Dissipation	395 W	-	-
Minimum Operating Temperature	- 40 C	- 40 C	-
Maximum Operating Temperature	+ 150 C	+ 125 C	-
Packaging	Tray	Tray	-
Brand	Infineon Technologies	Infineon Technologies	-
Mounting Style	Chassis Mount	Chassis Mount	-
Maximum Gate Emitter Voltage	20 V	20 V	-
Product Type	IGBT Modules	IGBT Modules	-
Factory Pack Quantity	10	20	-
Subcategory	IGBTs	IGBTs	-
Part # Aliases	FF75R12RT4HOSA1 SP000624916	FF75R12YT3BOMA1 SP000100348	-
Unit Weight	5.643834 oz	-	-
Package / Case	-	EASY2	-
Height	-	17 mm	-
Length	-	55.9 mm	-
Width	-	45.6 mm	-

Search Part Number : "FF7", Match & Start with "FF7" - Total : 26

FF7