 |  | | |
| PartNumber | FGA60N65SMD | FGA60N65 | FGA60N655MD |
| Description | IGBT Transistors 650V, 60A Field Stop IGBT | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-3PN | - | - |
| Mounting Style | Through Hole | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.9 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 120 A | - | - |
| Pd Power Dissipation | 600 W | - | - |
| Series | FGA60N65SMD | - | - |
| Packaging | Tube | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.225789 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGA60N65SMD | IGBT Transistors 650V, 60A Field Stop IGBT | |
ON Semiconductor |
FGA60N65SMD | IGBT Transistors 650V, 60A Field Stop IGBT | |
| FGA60N65SMD-- | 全新原装 | ||
| FGA60N65 | 全新原装 | ||
| FGA60N655MD | 全新原装 |