 |  |  | |
| PartNumber | FGD3N60UNDF | FGD3N60LSDTM | FGD3N60LSDTM-T |
| Description | IGBT Transistors 600V, 3A Short Circuit Rated IGBT | IGBT Transistors 600V IGBT HID Application | INTEGRATED CIRCUIT |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-252-3 | DPAK-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 2.4 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 6 A | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | FGD3N60UNDF | FGD3N60LSD | - |
| Packaging | Reel | Reel | - |
| Continuous Collector Current Ic Max | 3 A | 6 A | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Gate Emitter Leakage Current | 10 uA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.009184 oz | 0.009171 oz | - |
| Qualification | - | AEC-Q101 | - |
| Height | - | 2.3 mm | - |
| Length | - | 6.6 mm | - |
| Width | - | 6.1 mm | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGD3N60UNDF | IGBT Transistors 600V, 3A Short Circuit Rated IGBT | |
| FGD3N60LSDTM | IGBT Transistors 600V IGBT HID Application | ||
ON Semiconductor |
FGD3N60LSDTM | IGBT Transistors 600V IGBT HID Application | |
| FGD3N60UNDF | IGBT Transistors 600V, 3A Short Circuit Rated IGBT | ||
| FGD3N60LSDTM-T | INTEGRATED CIRCUIT | ||
| FGD3N60LLSD | 全新原装 | ||
| FGD3N60LSD | 全新原装 | ||
| FGD3N60LSDTF | 全新原装 | ||
| FGD3N60LSD_F085 | 全新原装 |