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| PartNumber | FQA7N80C-F109 |
| Description | MOSFET 800V N-Ch Q-FET advance C-Series |
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-3PN-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V |
| Id Continuous Drain Current | 7 A |
| Rds On Drain Source Resistance | 1.9 Ohms |
| Vgs Gate Source Voltage | 30 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 198 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | QFET |
| Packaging | Tube |
| Height | 20.1 mm |
| Length | 16.2 mm |
| Series | FQA7N80C_F109 |
| Transistor Type | 1 N-Channel |
| Width | 5 mm |
| Brand | ON Semiconductor / Fairchild |
| Fall Time | 60 ns |
| Product Type | MOSFET |
| Rise Time | 100 ns |
| Factory Pack Quantity | 450 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 50 ns |
| Typical Turn On Delay Time | 35 ns |
| Part # Aliases | FQA7N80C_F109 |
| Unit Weight | 0.225789 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQA7N80C-F109 | MOSFET 800V N-Ch Q-FET advance C-Series | |
ON Semiconductor |
FQA7N80C-F109 | MOSFET N-CH 800V 7A TO-3P |