 | | | |
| PartNumber | FQB22P10TM | FQB20N06LTM | FQB20N06TM |
| Description | MOSFET 100V P-Channel QFET | MOSFET 60V N-Channel QFET Logic Level | MOSFET 60V N-Channel QFET Logic Level |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
| Id Continuous Drain Current | 22 A | 21 A | 20 A |
| Rds On Drain Source Resistance | 125 mOhms | 55 mOhms | 60 mOhms |
| Vgs Gate Source Voltage | 30 V | 20 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 3.75 W | 3.75 W | 3.75 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FQB22P10 | - | - |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 13.5 S | 11 S | - |
| Fall Time | 110 ns | 70 ns | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 170 ns | 165 ns | 45 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 35 ns | 20 ns |
| Typical Turn On Delay Time | 17 ns | 10 ns | 5 ns |
| Part # Aliases | FQB22P10TM_NL | - | - |
| Unit Weight | 0.046296 oz | 0.011640 oz | 0.011640 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB22P10TM | MOSFET 100V P-Channel QFET | |
| FQB27P06TM | MOSFET 60V P-Channel QFET | ||
| FQB27N25TM-F085 | MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET | ||
| FQB25N33TM-F085 | MOSFET 330V NCH MOSFET | ||
| FQB22P10TM-F085 | MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V | ||
| FQB20N06LTM | MOSFET 60V N-Channel QFET Logic Level | ||
| FQB20N06TM | MOSFET 60V N-Channel QFET Logic Level | ||
| FQB20N06 | 全新原装 | ||
| FQB20N06L | 全新原装 | ||
| FQB20N06LTM-NL | 全新原装 | ||
| FQB20N06TM-NL | 全新原装 | ||
| FQB20N60 | 全新原装 | ||
| FQB20N60FTM | 全新原装 | ||
| FQB20N60LTM | 全新原装 | ||
| FQB22910 | 全新原装 | ||
| FQB22P10 | 全新原装 | ||
| FQB22P10TM-BL | 全新原装 | ||
| FQB22P10TM-NL | 全新原装 | ||
| FQB22P10TM_F085 | -100V /-22A/0.125HM@VGS=-10V | ||
| FQB24N08 | 全新原装 | ||
| FQB24N08TM-NL | 全新原装 | ||
| FQB2532 | 全新原装 | ||
| FQB25N33 | 全新原装 | ||
| FQB25N33TM-NB82122 | 全新原装 | ||
| FQB27N25 | 全新原装 | ||
| FQB27N25TM | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB27N25TM-AM002 | 全新原装 | ||
| FQB27N25TM-NL | 全新原装 | ||
| FQB27N25TM_F085 | 250V, 0.11OHM, 25.5A, N-CH MOS | ||
| FQB27N25TU | 全新原装 | ||
| FQB27P06 | 全新原装 | ||
| FQB27P06C | 全新原装 | ||
| FQB27P06TM-NL | 全新原装 | ||
| FQB27P06TM2400 | 全新原装 | ||
| FQB27PPP06TM | 全新原装 | ||
| FQB28N04 | 全新原装 | ||
| FQB28N15 | 全新原装 | ||
| FQB25N33TM_F085 | IGBT Transistors MOSFET 330V NCH MOSFET | ||
| FQB22P10TM-CUT TAPE | 全新原装 | ||
| FQB27P06TM-CUT TAPE | 全新原装 | ||
ON Semiconductor |
FQB20N06LTM | MOSFET N-CH 60V 21A D2PAK | |
| FQB20N06TM | MOSFET N-CH 60V 20A D2PAK | ||
| FQB22P10TM | MOSFET P-CH 100V 22A D2PAK | ||
| FQB22P10TM-F085 | MOSFET P-CH 100V 22A D2PAK | ||
| FQB24N08TM | MOSFET N-CH 80V 24A D2PAK | ||
| FQB25N33TM | MOSFET N-CH 330V 25A D2PAK | ||
| FQB25N33TM-F085 | MOSFET N-CH 330V 25A D2PAK | ||
| FQB27N25TM_AM002 | MOSFET N-CH 250V 25.5A D2PAK | ||
| FQB27P06TM | MOSFET P-CH 60V 27A D2PAK | ||
| FQB27N25TM-F085 | MOSFET N-CH 250V 25.5A 131M |