 | | | |
| PartNumber | FQB30N06LTM | FQB33N10LTM | FQB30N06TM |
| Description | MOSFET 60V N-Channel QFET Logic Level | MOSFET 100V N-Ch QFET Logic Level | MOSFET 60V N-Channel QFET Logic Level |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 100 V | 60 V |
| Id Continuous Drain Current | 32 A | 33 A | 30 A |
| Rds On Drain Source Resistance | 35 mOhms | 52 mOhms | 40 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 3.75 W | 3.75 W | 3.75 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FQB30N06L | FQB33N10L | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 24 S | 27 S | 16 S |
| Fall Time | 110 ns | 120 ns | 40 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 210 ns | 470 ns | 85 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 70 ns | 35 ns |
| Typical Turn On Delay Time | 15 ns | 17 ns | 10 ns |
| Unit Weight | 0.046296 oz | 0.046296 oz | 0.011640 oz |
| Part # Aliases | - | FQB33N10LTM_NL | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB30N06LTM | MOSFET 60V N-Channel QFET Logic Level | |
| FQB34P10TM | MOSFET 100V P-Channel QFET | ||
| FQB33N10LTM | MOSFET 100V N-Ch QFET Logic Level | ||
| FQB33N10TM | MOSFET 100V N-Channel QFET | ||
| FQB34N20TM-AM002 | MOSFET 200V N-Channel QFET | ||
| FQB34P10TM-F085 | MOSFET -33.5A,-100V, P-ch | ||
| FQB34P10TM-F085P | MOSFET -33.5A,-100V, P-ch MOSFET | ||
| FQB30N06TM | MOSFET 60V N-Channel QFET Logic Level | ||
| FQB30N06 | 全新原装 | ||
| FQB30N06L | 全新原装 | ||
| FQB30N06LT | 全新原装 | ||
| FQB30N06LTM-NL | 全新原装 | ||
| FQB30N06T | 全新原装 | ||
| FQB30N06TM-FQB30N06 | 全新原装 | ||
| FQB30N06TM-NL | 全新原装 | ||
| FQB30N20 | 全新原装 | ||
| FQB32N12V2 | 全新原装 | ||
| FQB32N12V2TM-NL | 全新原装 | ||
| FQB32N20C | 全新原装 | ||
| FQB32N20CTM-NL | 全新原装 | ||
| FQB32N212V2 | 全新原装 | ||
| FQB33N10 | 全新原装 | ||
| FQB33N10L | 全新原装 | ||
| FQB33N10LTM-NL | 全新原装 | ||
| FQB33N10TM-NL | 全新原装 | ||
| FQB33N25 | 全新原装 | ||
| FQB34N20 | 全新原装 | ||
| FQB34N20 34N20 FAIRCHIL | 全新原装 | ||
| FQB34N20L | 全新原装 | ||
| FQB34N20LTM-NL | 全新原装 | ||
| FQB34N20TM | Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB34N20TM AM002 | 全新原装 | ||
| FQB34N20TM-NL | 全新原装 | ||
| FQB34P10 | 全新原装 | ||
| FQB34N20TM_AM002 | Darlington Transistors MOSFET 200V N-Channel QFET | ||
| FQB33N10LTM-CUT TAPE | 全新原装 | ||
| FQB33N10TM-CUT TAPE | 全新原装 | ||
| FQB34N20LTM-CUT TAPE | 全新原装 | ||
| FQB34P10TM-CUT TAPE | 全新原装 | ||
ON Semiconductor |
FQB30N06LTM | MOSFET N-CH 60V 32A D2PAK | |
| FQB30N06TM | MOSFET N-CH 60V 30A D2PAK | ||
| FQB32N12V2TM | MOSFET N-CH 120V 32A D2PAK | ||
| FQB32N20CTM | MOSFET N-CH 200V 28A D2PAK | ||
| FQB33N10LTM | MOSFET N-CH 100V 33A D2PAK | ||
| FQB33N10TM | MOSFET N-CH 100V 33A D2PAK | ||
| FQB34N20TM-AM002 | MOSFET N-CH 200V 31A D2PAK | ||
| FQB34P10TM | MOSFET P-CH 100V 33.5A D2PAK | ||
| FQB34P10TM-F085P | PMOS D2PAK 100V 60 MOHM | ||
| FQB34N20LTM | MOSFET N-CH 200V 31A D2PAK | ||
| FQB34P10TM-F085 | MOSFET P-CH 100V 33.5A D2PAK |