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| PartNumber | FQD18N20V2TF | FQD18N20V2 | FQD18N20V2TF-NL |
| Description | MOSFET 200V N-Ch adv QFET V2 Series | MOSFET, N, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:15A, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.14ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vg | |
| Manufacturer | ON Semiconductor | FSC | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | MOSFET (Metal Oxide) | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Rds On Drain Source Resistance | 140 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 62 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 133 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | FQD18N20V2TF_NL | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Series | - | QFET | - |
| Part Status | - | Obsolete | - |
| FET Type | - | N-Channel | - |
| Drain to Source Voltage (Vdss) | - | 200V | - |
| Current Continuous Drain (Id) @ 25°C | - | 15A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V | - |
| Vgs(th) (Max) @ Id | - | 5V @ 250A | - |
| Gate Charge (Qg) (Max) @ Vgs | - | 26nC @ 10V | - |
| Vgs (Max) | - | ±30V | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | 1080pF @ 25V | - |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | 2.5W (Ta), 83W (Tc) | - |
| Rds On (Max) @ Id, Vgs | - | 140 mOhm @ 7.5A, 10V | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | D-Pak | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD18N20V2TM | MOSFET 200V N-Ch adv QFET V2 Series | |
| FQD18N20V2TF | MOSFET 200V N-Ch adv QFET V2 Series | ||
| FQD18N20V2 | MOSFET, N, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:15A, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.14ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vg | ||
| FQD18N20V2TF-NL | 全新原装 | ||
| FQD18N20V2TM-NL | 全新原装 | ||
| FQD18N20V2TM-CUT TAPE | 全新原装 | ||
ON Semiconductor |
FQD18N20V2TF | MOSFET N-CH 200V 15A DPAK | |
| FQD18N20V2TM | MOSFET N-CH 200V 15A DPAK |