 | |  | |
| PartNumber | FQD4P25TM-WS | FQD4P25TM-TWS | FQD4P25TM |
| Description | MOSFET 250V 3.1A 2.1Ohm P-Channel | MOSFET P-CH/250V/3.1A/ 2.1OHM | MOSFET P-CH 250V 3.1A DPAK |
| Manufacturer | ON Semiconductor | ON Semiconductor | FSC |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 3.1 A | - | - |
| Rds On Drain Source Resistance | 2.1 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 45 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.39 mm | 2.39 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Series | FQD4P25TM_WS | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 27 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 60 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 9.5 ns | - | - |
| Part # Aliases | FQD4P25TM_WS | FQD4P25TM_TWS | - |
| Unit Weight | 0.009184 oz | 0.011993 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD4P25TM-WS | MOSFET 250V 3.1A 2.1Ohm P-Channel | |
| FQD4P25TM-TWS | MOSFET P-CH/250V/3.1A/ 2.1OHM | ||
ON Semiconductor |
FQD4P25TM | MOSFET P-CH 250V 3.1A DPAK | |
| FQD4P25TM-WS | MOSFET P-CH 250V 3.1A DPAK | ||
| FQD4P25TM-NL | 全新原装 | ||
| FQD4P25TM_WS | IGBT Transistors MOSFET 250V 3.1A 2.1Ohm P-Channel |