HGTG18N120 stock, HGTG18N120, HGTG18N120BND


PartNumber	HGTG18N120BND	HGTG18N120BN
Description	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde	IGBT Transistors 54A 1200V N-Ch
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	Y	E
Technology	Si	Si
Package / Case	TO-247-3	TO-247-3
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1200 V	1200 V
Collector Emitter Saturation Voltage	2.45 V	2.45 V
Maximum Gate Emitter Voltage	20 V	20 V
Continuous Collector Current at 25 C	54 A	54 A
Pd Power Dissipation	390 W	390 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	HGTG18N120BND	HGTG18N120BN
Packaging	Tube	Tube
Continuous Collector Current Ic Max	54 A	54 A
Height	20.82 mm	20.82 mm
Length	15.87 mm	15.87 mm
Width	4.82 mm	4.82 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	54 A	54 A
Gate Emitter Leakage Current	+/- 250 nA	+/- 250 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	450	450
Subcategory	IGBTs	IGBTs
Part # Aliases	HGTG18N120BND_NL	HGTG18N120BN_NL
Unit Weight	0.225401 oz	0.225401 oz

Search Part Number : "HGTG18N120", Match & Start with "HGTG18N120" - Total : 10

制造商	型号	描述
ON Semiconductor / Fairchild	HGTG18N120BND	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
ON Semiconductor / Fairchild	HGTG18N120BN	IGBT Transistors 54A 1200V N-Ch
ON Semiconductor	HGTG18N120BND	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
ON Semiconductor	HGTG18N120BN	IGBT 1200V 54A 390W TO247
	HGTG18N120	全新原装
	HGTG18N120BND,18N120BND	全新原装
	HGTG18N120BND,18N120BND,	全新原装
	HGTG18N120BND,18N120BND,18N120,	全新原装
	HGTG18N120BND-NL	全新原装
	HGTG18N120BN G18N120BN	全新原装

HGTG18N120