 | |  | |
| PartNumber | IPB017N10N5LFATMA1 | IPB017N10N5ATMA1 | IPB017N08N5ATMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 100V 180A D2PAK-2 | MOSFET N-Ch 80V 120A D2PAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | PG-TO-263-7 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 80 V |
| Id Continuous Drain Current | 180 A | 180 A | 120 A |
| Rds On Drain Source Resistance | 1.5 mOhms | 1.7 mOhms | 1.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | 2.2 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 210 nC | 168 nC | 223 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 375 W | 375 W | 375 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 132 S | 132 S | 114 S |
| Fall Time | 27 ns | 27 ns | 37 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 23 ns | 23 ns | 36 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | 80 ns | 102 ns |
| Typical Turn On Delay Time | 33 ns | 33 ns | 40 ns |
| Part # Aliases | IPB017N10N5LF SP001503850 | IPB017N10N5 SP001227028 | IPB017N08N5 SP001132472 |
| Unit Weight | 0.077603 oz | 0.056438 oz | 0.139332 oz |
| Height | - | 4.4 mm | 4.4 mm |
| Length | - | 10 mm | 10 mm |
| Width | - | 9.25 mm | 9.25 mm |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB017N10N5LFATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| IPB017N10N5ATMA1 | MOSFET N-Ch 100V 180A D2PAK-2 | ||
| IPB019N08N3 G | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | ||
| IPB019N06L3 G | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | ||
| IPB017N08N5ATMA1 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB019N06L3GATMA1 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | ||
| IPB019N08N3GATMA1 | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | ||
| IPB019N08N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| IPB017N10N5LFATMA1 | MOSFET N-CH 100V D2PAK-7 | ||
| IPB019N06L3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB019N08N3GATMA1 | MOSFET N-CH 80V 180A TO263-7 | ||
| IPB017N10N5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-2 | ||
| IPB017N08N5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB019N08N5ATMA1 | DIFFERENTIATED MOSFETS | ||
| IPB017N08N5 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB019N06 | 全新原装 | ||
| IPB019N06L | 全新原装 | ||
| IPB019N06L3 | 全新原装 | ||
| IPB019N06L3 G | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 | ||
| IPB019N06L3G | 全新原装 | ||
| IPB019N08N | 全新原装 | ||
| IPB019N08N3 | 全新原装 | ||
| IPB019N08N3 G | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | ||
| IPB019N08N3G | Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: IPB019N08N3 G) | ||
| IPB019N08N3GS | 全新原装 |