 | | | |
| PartNumber | IPB021N04N | IPB021N04NG | IPB021N04NGATMA1 |
| Description | |||
| Manufacturer | INFINEON | - | - |
| Product Category | IC Chips | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| IPB021N04N | 全新原装 | ||
| IPB021N04NG | 全新原装 | ||
| IPB021N04NGATMA1 | 全新原装 | ||
| IPB021N06N3 | 全新原装 | ||
| IPB021N06N3G | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB021N06N3 G | IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2 | ||
Infineon Technologies |
IPB021N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 |