IPB021N06N3G

IPB021N06N3G
Mfr. #:
IPB021N06N3G
制造商:
Rochester Electronics, LLC
描述:
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命周期:
制造商新产品。
数据表:
IPB021N06N3G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
Tags
IPB021N06N3G, IPB021N06, IPB021, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IPB021N06N3GATMA1
DISTI # IPB021N06N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB021N06N3GATMA1
    DISTI # IPB021N06N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB021N06N3GATMA1
      DISTI # IPB021N06N3GATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB021N06N3 G
        DISTI # IPB021N06N3G
        Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB021N06N3G)
        RoHS: Not Compliant
        Min Qty: 224
        Container: Bulk
        Americas - 0
        • 672:$1.3900
        • 1120:$1.3900
        • 2240:$1.3900
        • 448:$1.4900
        • 224:$1.5900
        IPB021N06N3 G
        DISTI # 726-IPB021N06N3G
        Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
        RoHS: Compliant
        0
          IPB021N06N3GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          479
          • 1000:$1.4700
          • 500:$1.5500
          • 100:$1.6200
          • 25:$1.6800
          • 1:$1.8100
          图片 型号 描述
          IPB021N04N

          Mfr.#: IPB021N04N

          OMO.#: OMO-IPB021N04N-1190

          全新原装
          IPB021N04NG

          Mfr.#: IPB021N04NG

          OMO.#: OMO-IPB021N04NG-1190

          全新原装
          IPB021N04NGATMA1

          Mfr.#: IPB021N04NGATMA1

          OMO.#: OMO-IPB021N04NGATMA1-1190

          全新原装
          IPB021N06N3

          Mfr.#: IPB021N06N3

          OMO.#: OMO-IPB021N06N3-1190

          全新原装
          IPB021N06N3G

          Mfr.#: IPB021N06N3G

          OMO.#: OMO-IPB021N06N3G-1190

          Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          IPB021N06N3GATMA1

          Mfr.#: IPB021N06N3GATMA1

          OMO.#: OMO-IPB021N06N3GATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 60V 120A TO263-3
          IPB021N06N3 G

          Mfr.#: IPB021N06N3 G

          OMO.#: OMO-IPB021N06N3-G-126

          IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2
          可用性
          库存:
          Available
          订购:
          3000
          输入数量:
          IPB021N06N3G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格(美元)
          数量
          单价
          小计金额
          1
          US$2.20
          US$2.20
          10
          US$2.09
          US$20.95
          100
          US$1.98
          US$198.45
          500
          US$1.87
          US$937.15
          1000
          US$1.76
          US$1 764.00
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