 | |  | |
| PartNumber | IPB093N04L G | IPB093N04LG | IPB093N04LGATMA1 |
| Description | Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | MOSFET N-CH 40V 50A TO263-3 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| IPB093N04L G | 全新原装 | ||
| IPB093N04LG | Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Infineon Technologies |
IPB093N04LGATMA1 | MOSFET N-CH 40V 50A TO263-3 |