IPB093N04LG

IPB093N04LG
Mfr. #:
IPB093N04LG
制造商:
Rochester Electronics, LLC
描述:
Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命周期:
制造商新产品。
数据表:
IPB093N04LG 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
Tags
IPB093, IPB09, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IPB093N04LGATMA1
DISTI # IPB093N04LGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB093N04LGATMA1
    DISTI # IPB093N04LGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 40V 50A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB093N04LGATMA1
      DISTI # IPB093N04LGATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 40V 50A TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB093N04L G
        DISTI # IPB093N04LG
        Infineon Technologies AGTrans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB093N04LG)
        RoHS: Not Compliant
        Min Qty: 1042
        Container: Bulk
        Americas - 0
        • 10420:$0.3039
        • 5210:$0.3099
        • 3126:$0.3209
        • 2084:$0.3329
        • 1042:$0.3449
        IPB093N04L G
        DISTI # 726-IPB093N04LG
        Infineon Technologies AGMOSFET N-Ch 40V 50A D2PAK-2
        RoHS: Compliant
        0
          IPB093N04LGInfineon Technologies AGPower Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          20985
          • 1000:$0.3200
          • 500:$0.3300
          • 100:$0.3500
          • 25:$0.3600
          • 1:$0.3900
          图片 型号 描述
          IPB090N06N3GATMA1

          Mfr.#: IPB090N06N3GATMA1

          OMO.#: OMO-IPB090N06N3GATMA1

          MOSFET MV POWER MOS
          IPB090N06N3 G

          Mfr.#: IPB090N06N3 G

          OMO.#: OMO-IPB090N06N3-G-1190

          IPB090N06N3 G
          IPB090N06N3G

          Mfr.#: IPB090N06N3G

          OMO.#: OMO-IPB090N06N3G-1190

          Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          IPB090N06N3GATMA1

          Mfr.#: IPB090N06N3GATMA1

          OMO.#: OMO-IPB090N06N3GATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 60V 50A TO263-3
          IPB090N06N3GATMA1 , 2SD1

          Mfr.#: IPB090N06N3GATMA1 , 2SD1

          OMO.#: OMO-IPB090N06N3GATMA1-2SD1-1190

          全新原装
          IPB096N03LG

          Mfr.#: IPB096N03LG

          OMO.#: OMO-IPB096N03LG-1190

          Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          IPB097N08N3GXT

          Mfr.#: IPB097N08N3GXT

          OMO.#: OMO-IPB097N08N3GXT-1190

          全新原装
          IPB09N03LA G

          Mfr.#: IPB09N03LA G

          OMO.#: OMO-IPB09N03LA-G-INFINEON-TECHNOLOGIES

          MOSFET N-CH 25V 50A D2PAK
          IPB097N08N3 G

          Mfr.#: IPB097N08N3 G

          OMO.#: OMO-IPB097N08N3-G-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3
          IPB096N03L G

          Mfr.#: IPB096N03L G

          OMO.#: OMO-IPB096N03L-G-126

          IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3
          可用性
          库存:
          Available
          订购:
          3500
          输入数量:
          IPB093N04LG的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格(美元)
          数量
          单价
          小计金额
          1
          US$0.00
          US$0.00
          10
          US$0.00
          US$0.00
          100
          US$0.00
          US$0.00
          500
          US$0.00
          US$0.00
          1000
          US$0.00
          US$0.00
          从...开始
          最新产品
          • IO-Link™ Devices
            Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
          • Large Diameter Clear Hole Spacers
            RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
          • WE-ExB Series Common Mode Power Line Choke
            Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
          • CPI2-B1-REU Production Device Programmer
            Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
          • CFSH05-20L Schottky Diode
            Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
          Top