 |  | | |
| PartNumber | IPB200N15N3 G | IPB200N15N3 | IPB200N15N3G |
| Description | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Infineon | Infineon Technologies | INFINEON |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 20 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 31 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 57 S, 29 S | - | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | IPB200N15N3GATMA1 IPB2N15N3GXT SP000414740 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | IPB200N15N3GATMA1 IPB200N15N3GXT SP000414740 | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 150 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Vds Drain Source Breakdown Voltage | - | 150 V | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Rds On Drain Source Resistance | - | 20 mOhms | - |
| Qg Gate Charge | - | 31 nC | - |
| Forward Transconductance Min | - | 57 S 29 S | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB200N15N3 G | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | |
| IPB200N15N3GATMA1 | MOSFET N-CH 150V 50A TO263-3 | ||
Infineon Technologies |
IPB200N15N3GATMA1 | MOSFET MV POWER MOS | |
| IPB200N15N3GATMA1-CUT TAPE | 全新原装 | ||
| IPB200N15N3 | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB200N15N3 G | Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 | ||
| IPB200N15N3G | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB200N15N3G 200N15N | 全新原装 | ||
| IPB200N15N3GS | 全新原装 | ||
| IPB200N15N3S | 全新原装 |