IPB200N15N3

Mfr. #:: IPB200N15N3
制造商:: Rochester Electronics, LLC
描述:: Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命周期:: 制造商新产品。
数据表:: IPB200N15N3 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: OptiMOS 3

打包: 卷轴

部分别名: IPB200N15N3GATMA1 IPB200N15N3GXT SP000414740

单位重量: 0.139332 oz

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 150 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 6 ns

上升时间: 11 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 50 A

Vds-漏-源-击穿电压: 150 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 20 mOhms

晶体管极性: N通道

典型关断延迟时间: 23 ns

典型开启延迟时间: 14 ns

Qg-门电荷: 31 nC

正向跨导最小值: 57 S 29 S

通道模式: 增强

Tags: IPB200N15N3, IPB200N1, IPB200, IPB20, IPB2, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB200N15N3 描述

***or: N-CHANNEL POWER MOSFET

Market price

型号	制造商	描述	库存	价格
IPB200N15N3GATMA1 DISTI # 31077231	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4000	2000:$1.2425 1000:$1.3875
IPB200N15N3 G DISTI # 30579106	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 RoHS: Compliant	1000	500:$1.6575 100:$1.8870 50:$2.0145 10:$2.3843
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1999In Stock	500:$1.8473 100:$2.3751 10:$2.9560 1:$3.2700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1999In Stock	500:$1.8473 100:$2.3751 10:$2.9560 1:$3.2700
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$1.4861
IPB200N15N3 G DISTI # C1S322000088900	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	100:$1.4800 50:$1.5800 10:$1.8700 1:$2.2000
IPB200N15N3GATMA1 DISTI # C1S322000281482	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4000	1000:$1.3800
IPB200N15N3 G DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.8900 2000:€1.4900 4000:€1.1900 6000:€1.0900 10000:€1.0900
IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.2900 2000:$1.1900 4000:$1.1900 6000:$1.1900 10000:$1.0900
IPB200N15N3GATMA1 DISTI # SP000414740	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.5199 2000:€1.2669 4000:€1.1689 6000:€1.0859 10000:€1.0129
IPB200N15N3GATMA1 DISTI # 60R2679	Infineon Technologies AG	MOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes	0	1:$2.8600 10:$2.5700 100:$2.0600 500:$1.6900
IPB200N15N3 G DISTI # 726-IPB200N15N3G	Infineon Technologies AG	MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$2.7500 10:$2.3300 100:$1.8700 500:$1.6400 1000:$1.3600
IPB200N15N3	Infineon Technologies AG	RoHS: Not Compliant	101	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
IPB200N15N3G	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	127	1000:$1.1200 500:$1.1800 100:$1.2300 25:$1.2800 1:$1.3800
IPB200N15N3GATMA1 DISTI # 7545443	Infineon Technologies AG	MOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK	286	2:£2.0250 10:£1.6050 50:£1.4450 250:£1.2850 500:£1.1250
IPB200N15N3GATMA1 DISTI # 1775559	Infineon Technologies AG	MOSFET, N CH, 50A, 150V, PG-TO263-3 RoHS: Compliant	954	1:£2.0500 10:£1.4600 100:£1.3800 250:£1.3000 500:£1.1400
IPB200N15N3G DISTI # XSKDRABV0030580	INF	RoHS: Compliant	720	1000:$1.9000

图片	型号	描述
	Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G	MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
	Mfr.#: IPB200N25N3 G OMO.#: OMO-IPB200N25N3-G	MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
	Mfr.#: IPB200N25N3G OMO.#: OMO-IPB200N25N3G-1190	POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
	Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G-1190	Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
	Mfr.#: IPB200N15N3GATMA1 OMO.#: OMO-IPB200N15N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 50A TO263-3
	Mfr.#: IPB200N15N3GS OMO.#: OMO-IPB200N15N3GS-1190	全新原装
	Mfr.#: IPB200N25N3 OMO.#: OMO-IPB200N25N3-1190	全新原装
	Mfr.#: IPB200N25N3GATMA1 OMO.#: OMO-IPB200N25N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 250V 64A TO263-3
	Mfr.#: IPB200N25N3GXT OMO.#: OMO-IPB200N25N3GXT-1190	全新原装
	Mfr.#: IPB20N03L OMO.#: OMO-IPB20N03L-1190	全新原装

IPB200N15N3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes