 | | | |
| PartNumber | IPD068N10N3GATMA1 | IPD068P03L3GATMA1 | IPD068N10N3GBTMA1 |
| Description | MOSFET MV POWER MOS | MOSFET SMALL SIGNAL+P-CH | MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-252-3 | PG-TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V | 100 V |
| Id Continuous Drain Current | 90 A | 70 A | 90 A |
| Rds On Drain Source Resistance | 6.8 mOhms | 6.8 mOhms | 5.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 1 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 51 nC | 91 nC | 68 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 150 W | 100 W | 150 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | OptiMOS 3 | - | XPD068N10 |
| Transistor Type | 1 N-Channel | 1 P-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 54 S | 50 S | 54 S |
| Fall Time | 9 ns | 31 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 37 ns | 100 ns | 37 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 37 ns | 84 ns | 37 ns |
| Typical Turn On Delay Time | 19 ns | 11 ns | 19 ns |
| Part # Aliases | G IPD068N10N3 SP001127816 | G IPD068P03L3 SP001127838 | G IPD068N10N3 IPD068N10N3GXT SP000469892 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD068N10N3GATMA1 | MOSFET MV POWER MOS | |
| IPD068P03L3GATMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| IPD068N10N3GATMA1 | MOSFET N-CH 100V 90A | ||
| IPD068N10N3GBTMA1 | MOSFET N-CH 100V 90A TO252-3 | ||
| IPD068P03L3GATMA1 | MOSFET P-CH 30V 70A TO252-3 | ||
| IPD068P03L3GBTMA1 | MOSFET P-CH 30V 70A TO252-3 | ||
Infineon Technologies |
IPD068N10N3GBTMA1 | MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3 | |
| IPD068P03L3GATMA1-CUT TAPE | 全新原装 | ||
| IPD068N10N3 | 全新原装 | ||
| IPD068N10N3 G | MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3 | ||
| IPD068N10N3G | Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) TO-252 (Alt: IPD068N10N3 G) | ||
| IPD068N10N3G 068N10N | 全新原装 | ||
| IPD068N10N3GS | 全新原装 | ||
| IPD068P03L | 全新原装 | ||
| IPD068P03L3G | Trans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R (Alt: IPD068P03L3 G) | ||
| IPD068P03L3G 068P03L | 全新原装 | ||
| IPD068P03L3GBTMA1 , 2SD2 | 全新原装 | ||
| IPD068P03L3GS | 全新原装 |