| PartNumber | IPD60R650CEATMA1 | IPD60R650CEBTMA1 | IPD60R650CEAUMA1 |
| Description | MOSFET N-Ch 600V 7A DPAK-2 | MOSFET CONSUMER | MOSFET CONSUMER |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 7 A | - | 9.9 A |
| Rds On Drain Source Resistance | 650 mOhms | - | 540 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | 2.5 V |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Qg Gate Charge | 20.5 nC | - | 20.5 nC |
| Minimum Operating Temperature | - 40 C | - | - 40 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 63 W | - | 82 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 11 ns | - | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | - | 8 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 58 ns | - | 58 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Part # Aliases | IPD60R650CEATMA1 SP001276026 | IPD60R650CE SP001369530 | IPD60R650CE SP001396884 |
| Unit Weight | 0.139332 oz | 0.011993 oz | 0.011993 oz |
| Series | - | CoolMOS CE | CoolMOS CE |
| Moisture Sensitive | - | - | Yes |