IPD65R380C

IPD65R380C6 vs IPD65R380C6ATMA1 vs IPD65R380C6BTMA1

 
PartNumberIPD65R380C6IPD65R380C6ATMA1IPD65R380C6BTMA1
DescriptionMOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS C6MOSFET LOW POWER_LEGACYMOSFET N-CH 650V 10.6A TO252-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current10.6 A10.6 A-
Rds On Drain Source Resistance340 mOhms340 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation83 W83 W-
ConfigurationSingleSingle-
TradenameCoolMOSCoolMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesCoolMOS C6CoolMOS C6-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPD65R380C6BTMA1 IPD65R38C6XT SP000745022IPD65R380C6ATMA1 SP001117734-
Unit Weight0.139332 oz0.139332 oz-
Vgs th Gate Source Threshold Voltage-2.5 V-
Qg Gate Charge-39 nC-
Channel Mode-Enhancement-
Fall Time-11 ns-
Rise Time-12 ns-
Typical Turn Off Delay Time-110 ns-
Typical Turn On Delay Time-12 ns-
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPD65R380C6 MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS C6
IPD65R380C6BTMA1 MOSFET N-CH 650V 10.6A TO252-3
IPD65R380C6ATMA1 MOSFET N-CH 650V 10.6A TO252-3
Infineon Technologies
Infineon Technologies
IPD65R380C6ATMA1 MOSFET LOW POWER_LEGACY
IPD65R380C6 Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380C6BTMA1)
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