 | | | |
| PartNumber | IPP041N12N3 G | IPP041N04N G | IPP041N04NGXKSA1 |
| Description | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | 40 V | - |
| Id Continuous Drain Current | 120 A | 80 A | - |
| Rds On Drain Source Resistance | 3.5 mOhms | 4.1 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 211 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 94 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 83 S | - | - |
| Fall Time | 21 ns | 4.8 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 52 ns | 3.8 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 70 ns | 23 ns | - |
| Typical Turn On Delay Time | 35 ns | 16 ns | - |
| Part # Aliases | IPP041N12N3GXKSA1 IPP41N12N3GXK SP000652746 | IPP041N04NGXKSA1 IPP41N4NGXK SP000680790 | G IPP041N04N IPP41N4NGXK SP000680790 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP041N12N3 G | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | |
| IPP041N12N3GXKSA1 | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | ||
| IPP041N04N G | MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 | ||
| IPP041N12N3GXK | MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3 | ||
| IPP041N04NGXKSA1 | MOSFET N-CH 40V 80A TO220-3 | ||
| IPP041N12N3GXKSA1 | MOSFET N-CH 120V 120A TO220-3 | ||
| IPP041N04N G | IGBT Transistors MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 | ||
Infineon Technologies |
IPP041N04NGXKSA1 | MOSFET MV POWER MOS | |
| IPP041N04N | 全新原装 | ||
| IPP041N04N G(SP00068079 | 全新原装 | ||
| IPP041N04N3G | 全新原装 | ||
| IPP041N04NG HF | 全新原装 | ||
| IPP041N04NG,041N04N | 全新原装 | ||
| IPP041N04NGXKSA1 , 2SD31 | 全新原装 | ||
| IPP041N12N | 全新原装 | ||
| IPP041N12N3G(041N12N) | 全新原装 | ||
| IPP041N04NG | Power Field-Effect Transistor, 80A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP041N04NGHKSA1 | MOSFET N-Ch 40V 80A TO220-3 | ||
| IPP041N12N3G | 120V,120A,N Channel Power MOSFET |