IPP048N12N3

IPP048N12N3 G vs IPP048N12N3 vs IPP048N12N3G

 
PartNumberIPP048N12N3 GIPP048N12N3IPP048N12N3G
DescriptionMOSFET N-Ch 120V 100A TO220-3 OptiMOS 3
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance4.8 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge137 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
TypeOptiMOS 3 Power-Transistor--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min162 S, 81 S--
Fall Time19 ns--
Product TypeMOSFET--
Rise Time55 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns--
Typical Turn On Delay Time31 ns--
Part # AliasesIPP048N12N3GXKSA1 IPP48N12N3GXK SP000652734--
Unit Weight0.211644 oz--
制造商 型号 描述 RFQ
Infineon Technologies
Infineon Technologies
IPP048N12N3 G MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3
IPP048N12N3GXKSA1 MOSFET N-CH 120V 100A TO220-3
Infineon Technologies
Infineon Technologies
IPP048N12N3GXKSA1 MOSFET MV POWER MOS
IPP048N12N3 全新原装
IPP048N12N3 G Trans MOSFET N-CH 120V 100A 3-Pin TO-220 Tube - Bulk (Alt: IPP048N12N3 G)
IPP048N12N3G 全新原装
IPP048N12N3G 048N12N 全新原装
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