 |  | | |
| PartNumber | IPW65R280C6 | IPW65R280C6FKSA1 | IPW65R280E6 |
| Description | MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS C6 | MOSFET N-CH 650V 13.8A TO247 | Darlington Transistors MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS E6 |
| Manufacturer | INFINEON | - | INFINEON |
| Product Category | FETs - Single | - | FETs - Single |
| Series | CoolMOS C6 | - | CoolMOS E6 |
| Packaging | Tube | - | Tube |
| Part Aliases | IPW65R280C6FKSA1 IPW65R280C6XK SP000785060 | - | IPW65R280E6FKSA1 IPW65R280E6XK SP000795272 |
| Unit Weight | 1.340411 oz | - | 1.340411 oz |
| Mounting Style | Through Hole | - | Through Hole |
| Tradename | CoolMOS | - | CoolMOS |
| Package Case | TO-247-3 | - | TO-247-3 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 104 W | - | 104 W |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 12 ns | - | 12 ns |
| Rise Time | 11 ns | - | 11 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 13.8 A | - | 13.8 A |
| Vds Drain Source Breakdown Voltage | 700 V | - | 700 V |
| Rds On Drain Source Resistance | 280 mOhms | - | 280 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 105 nS | - | 105 nS |
| Qg Gate Charge | 45 nC | - | 45 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW65R280E6FKSA1 | MOSFET LOW POWER_LEGACY | |
Infineon Technologies |
IPW65R280E6FKSA1 | MOSFET N-CH 650V 13.8A TO247 | |
| IPW65R280C6FKSA1 | MOSFET N-CH 650V 13.8A TO247 | ||
| IPW65R280C6 | MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS C6 | ||
| IPW65R280E6 | Darlington Transistors MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS E6 | ||
| IPW65R280E6 , 2SJ314-01S | 全新原装 |