IPW65R280C6

Mfr. #:: IPW65R280C6
制造商:: Rochester Electronics, LLC
描述:: MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS C6
生命周期:: 制造商新产品。
数据表:: IPW65R280C6 数据表
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ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: CoolMOS C6

打包: 管子

部分别名: IPW65R280C6FKSA1 IPW65R280C6XK SP000785060

单位重量: 1.340411 oz

安装方式: 通孔

商品名: 酷摩

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 104 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12 ns

上升时间: 11 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 13.8 A

Vds-漏-源-击穿电压: 700 V

Rds-On-Drain-Source-Resistance: 280 mOhms

晶体管极性: N通道

典型关断延迟时间: 105 nS

Qg-门电荷: 45 nC

Tags: IPW65R2, IPW65R, IPW65, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
IPW65R280C6FKSA1 DISTI # IPW65R280C6FKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 13.8A TO247 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IPW65R280C6FKSA1 DISTI # 33AC5088	Infineon Technologies AG	MOSFET, N-CH, 650V, 13.8A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:13.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	179	1:$2.8600 10:$2.4800 25:$2.1700 50:$2.0300 100:$1.7600 250:$1.4800 500:$1.4300
IPW65R280C6 DISTI # 726-IPW65R280C6	Infineon Technologies AG	MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS C6 RoHS: Compliant	110	1:$3.1300 10:$2.6600 100:$2.3100
IPW65R280C6FKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPW65R280C6FKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	4080	1000:$1.4200 500:$1.5000 100:$1.5600 25:$1.6200 1:$1.7500
IPW65R280C6FKSA1 DISTI # 2781347	Infineon Technologies AG	MOSFET, N-CH, 650V, 13.8A, TO-247 RoHS: Compliant	179	1:$3.5700 10:$3.3400 100:$2.9500
IPW65R280C6FKSA1 DISTI # 2781347	Infineon Technologies AG	MOSFET, N-CH, 650V, 13.8A, TO-247 RoHS: Compliant	179	1:£2.6700 10:£2.0200 100:£1.7400

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