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| PartNumber | IRF2907ZS-7PPBF. | IRF2907ZS-7P | IRF2907ZS-7PPBF |
| Description | MOSFET N-CH 75V 160A D2PAK7 | ||
| Manufacturer | - | IR | IR |
| Product Category | - | FETs - Single | FETs - Single |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.056438 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-263-7 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 300 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 44 ns |
| Rise Time | - | - | 90 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 180 A |
| Vds Drain Source Breakdown Voltage | - | - | 75 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 3.8 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 92 ns |
| Typical Turn On Delay Time | - | - | 21 ns |
| Qg Gate Charge | - | - | 170 nC |
| Forward Transconductance Min | - | - | 94 S |
| Channel Mode | - | - | Enhancement |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| IRF2907ZS-7PPBF. | 全新原装 | ||
| IRF2907ZS-7P | 全新原装 | ||
Infineon Technologies |
IRF2907ZS-7PPBF | MOSFET N-CH 75V 160A D2PAK7 |