 |  | | |
| PartNumber | IRF60DM206 | IRF60DM206-CUT TAPE | IRF60DM206TRPBF |
| Description | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DirectFET-ME | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 130 A | - | - |
| Rds On Drain Source Resistance | 2.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 133 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 96 W | - | - |
| Configuration | Single | - | - |
| Tradename | StrongIRFET | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 148 S | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 32 ns | - | - |
| Factory Pack Quantity | 4800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | SP001561876 | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF60DM206 | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og | |
| IRF60DM206-CUT TAPE | 全新原装 | ||
| IRF60DM206TRPBF | 全新原装 | ||
Infineon Technologies |
IRF60DM206 | MOSFET N-CH 60V 130A |