 |  | | |
| PartNumber | IRF7907PBF | IRF7907PBF-1 | IRF7907TR |
| Description | MOSFET 2N-CH 30V 9.1A/11A 8SOIC | ||
| Manufacturer | Infineon Technologies | - | IOR |
| Product Category | FETs - Arrays | - | FETs - Arrays |
| Series | HEXFETR | - | - |
| Packaging | Tube Alternate Packaging | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | 8-SO | - | - |
| Configuration | Dual | - | - |
| FET Type | 2 N-Channel (Dual) | - | - |
| Power Max | 2W | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Drain to Source Voltage Vdss | 30V | - | - |
| Input Capacitance Ciss Vds | 850pF @ 15V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 9.1A, 11A | - | - |
| Rds On Max Id Vgs | 16.4 mOhm @ 9.1A, 10V | - | - |
| Vgs th Max Id | 2.35V @ 25μA | - | - |
| Gate Charge Qg Vgs | 10nC @ 4.5V | - | - |
| Pd Power Dissipation | 2.0 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 3.4 ns 5.3 ns | - | - |
| Rise Time | 9.3 ns 14 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 9.1 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 20.5 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 8 ns 13 ns | - | - |
| Typical Turn On Delay Time | 6 ns 8 ns | - | - |
| Qg Gate Charge | 6.7 nC | - | - |
| Channel Mode | Enhancement | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF7907TRPBF | MOSFET MOSFT DUAL NCh 30V 9.1A | |
| IRF7907PBF | MOSFET 2N-CH 30V 9.1A/11A 8SOIC | ||
| IRF7907TRPBF | MOSFET 2N-CH 30V 9.1A/11A 8-SOIC | ||
| IRF7907PBF-1 | 全新原装 | ||
| IRF7907TR | 全新原装 |