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IRF7907PBF

IRF7907PBF
Mfr. #:
IRF7907PBF
制造商:
Infineon Technologies
描述:
MOSFET 2N-CH 30V 9.1A/11A 8SOIC
生命周期:
制造商新产品。
数据表:
IRF7907PBF 数据表
交货:
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支付:
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HTML Datasheet:
IRF7907PBF DatasheetIRF7907PBF Datasheet (P4-P6)IRF7907PBF Datasheet (P7-P9)IRF7907PBF Datasheet (P10)
ECAD Model:
产品属性
属性值
制造商
英飞凌科技
产品分类
FET - 阵列
系列
十六进制
打包
管替代包装
单位重量
0.019048 oz
安装方式
贴片/贴片
包装盒
8-SOIC (0.154", 3.90mm Width)
技术
硅
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
2 Channel
供应商-设备-包
8-SO
配置
双重的
FET型
2 N-Channel (Dual)
最大功率
2W
晶体管型
2 N-Channel
漏源电压 Vdss
30V
输入电容-Ciss-Vds
850pF @ 15V
FET-Feature
逻辑电平门
Current-Continuous-Drain-Id-25°C
9.1A, 11A
Rds-On-Max-Id-Vgs
16.4 mOhm @ 9.1A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
栅极电荷-Qg-Vgs
10nC @ 4.5V
钯功耗
2.0 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
3.4 ns 5.3 ns
上升时间
9.3 ns 14 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
9.1 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
20.5 mOhms
晶体管极性
N通道
典型关断延迟时间
8 ns 13 ns
典型开启延迟时间
6 ns 8 ns
Qg-门电荷
6.7 nC
通道模式
增强
Tags
IRF7907, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
***p One Stop Japan
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC Tube
***ical
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***Components
MOSFET N-Channel 30V 9.1A/11A SOIC8
***i-Key
MOSFET N-CHAN DUAL 30V 8-SOIC
***ronik
2N-CH 30V 9,1A 11,8mOhm SO8 RoHSconf
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:11.8mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:9.1A; Current, Id Cont N Channel 3:11A; Resistance, Rds on N Channel 1:13.7ohm; Resistance, Rds on N Channel 2:9.8ohm
***ment14 APAC
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):9.8mohm; Power Dissipation Pd:2W
型号 制造商 描述 库存 价格
IRF7907PBF
DISTI # IRF7907PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF7907PBF
    DISTI # 70017286    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET),11 A (Synchronous FET),SO-8
    RoHS: Compliant    		0
    • 3800:$1.3400
    • 7600:$1.3130
    • 19000:$1.2730
    • 38000:$1.2190
    • 95000:$1.1390
    IRF7907PBF
    DISTI # 942-IRF7907PBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
    RoHS: Compliant    		0
      IRF7907PBFInternational Rectifier 2849
        IRF7907PBF
        DISTI # 1843031        		Infineon Technologies AGMOSFET,NN CH,30V,9.1A,SO8
        RoHS: Compliant        		0
        • 1:$1.7200
        • 10:$1.5300
        • 100:$1.1900
        • 500:$0.9820
        • 1000:$0.7760
        图片 型号 描述
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        IRF7905PBF

        Mfr.#: IRF7905PBF

        OMO.#: OMO-IRF7905PBF

        		 MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
        IRF7901D1TR

        Mfr.#: IRF7901D1TR

        OMO.#: OMO-IRF7901D1TR-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 6.2A 8SOIC
        IRF7902TRPBF 28K

        Mfr.#: IRF7902TRPBF 28K

        OMO.#: OMO-IRF7902TRPBF-28K-1190

        		 全新原装
        IRF7904TRPBF-1

        Mfr.#: IRF7904TRPBF-1

        OMO.#: OMO-IRF7904TRPBF-1-1190

        		 MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
        IRF7907PBF

        Mfr.#: IRF7907PBF

        OMO.#: OMO-IRF7907PBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 9.1A/11A 8SOIC
        IRF7907PBF-1

        Mfr.#: IRF7907PBF-1

        OMO.#: OMO-IRF7907PBF-1-1190

        		 全新原装
        IRF7907TRPBF

        Mfr.#: IRF7907TRPBF

        OMO.#: OMO-IRF7907TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
        IRF7902TRPBF

        Mfr.#: IRF7902TRPBF

        OMO.#: OMO-IRF7902TRPBF-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET MOSFT DUAL NCh 30V 9.7A
        可用性
        库存:
        Available
        订购:
        2500
        输入数量:
        IRF7907PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$1.71
        US$1.71
        10
        US$1.62
        US$16.23
        100
        US$1.54
        US$153.77
        500
        US$1.45
        US$726.10
        1000
        US$1.37
        US$1 366.80
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