 | |  | |
| PartNumber | IRF8313TRPBF | IRF8313PBF | IRF8327STR1PBF |
| Description | MOSFET MOSFT DUAL NCh 30V 9.7A | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | MOSFET N-CH 30V 14A SQ |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 9.7 A | 9.7 A | - |
| Rds On Drain Source Resistance | 21.6 mOhms | 21.6 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 6 nC | 6 nC | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Dual | Dual | - |
| Packaging | Reel | Tube | - |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 4000 | 95 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001577640 | SP001570694 | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF8327STRPBF | MOSFET 30V N-Channel HEXFET Power MOSFET | |
| IRF8313PBF | Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube | ||
| IRF8313TRPBF | MOSFET 2N-CH 30V 9.7A 8-SOIC | ||
| IRF8327STR1PBF | MOSFET N-CH 30V 14A SQ | ||
| IRF8327STRPBF | RF Bipolar Transistors MOSFET 30V N-Channel HEXFET Power MOSFET | ||
Vishay / Siliconix |
IRF830SPBF | MOSFET N-CH 500V HEXFET MOSFET D2-PA | |
| IRF830STRLPBF | MOSFET N-Chan 500V 4.5 Amp | ||
| IRF830PBF | MOSFET N-CH 500V HEXFET MOSFET | ||
| IRF830BPBF | MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS | ||
| IRF830S | MOSFET RECOMMENDED ALT 844-IRF830SPBF | ||
| IRF830STRL | MOSFET RECOMMENDED ALT 844-IRF830STRLPBF | ||
Infineon / IR |
IRF8313TRPBF | MOSFET MOSFT DUAL NCh 30V 9.7A | |
| IRF8313PBF | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | ||
| IRF8313TRPBF-CUT TAPE | 全新原装 | ||
| IRF830B | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF830B IRF830 | 全新原装 | ||
| IRF830B,IRF830BTSTU_FP00 | 全新原装 | ||
| IRF830BBF | 全新原装 | ||
| IRF830FI | INSTOCK | ||
| IRF830I | 全新原装 | ||
| IRF830N | 全新原装 | ||
| IRF830NPBF | 全新原装 | ||
| IRF830NS | 全新原装 | ||
| IRF830NTRPBF | 全新原装 | ||
| IRF830P | 全新原装 | ||
| IRF830PBF 2SK3305 | 全新原装 | ||
| IRF830PBF,IRF730, | 全新原装 | ||
| IRF830PBF,IRF830 | 全新原装 | ||
| IRF830PBF,IRF830A,IRF830 | 全新原装 | ||
| IRF830PBR | 全新原装 | ||
| IRF830R | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF830SPBF,IRF830STRLPBF | 全新原装 | ||
| IRF830STRPBF | 全新原装 | ||
| IRF831 | Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF8313 | 全新原装 | ||
| IRF8313TR | 全新原装 | ||
| IRF8313TRPBFINFINEON | 全新原装 | ||
| IRF831FI | 全新原装 | ||
| IRF831P | 全新原装 | ||
| IRF831PBF | 全新原装 | ||
| IRF832 | Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 | ||
Vishay |
IRF830STRR | MOSFET N-CH 500V 4.5A D2PAK | |
| IRF830L | MOSFET N-CH 500V 4.5A TO-262 | ||
| IRF830LPBF | MOSFET N-CH 500V 4.5A TO-262 | ||
| IRF830PBF | MOSFET N-CH 500V 4.5A TO-220AB | ||
| IRF830S | MOSFET N-CH 500V 4.5A D2PAK | ||
| IRF830SPBF | MOSFET N-CH 500V 4.5A D2PAK | ||
| IRF830STRL | MOSFET N-CH 500V 4.5A D2PAK | ||
| IRF830STRLPBF | IGBT Transistors MOSFET N-Chan 500V 4.5 Amp | ||
| IRF830BPBF | IGBT Transistors MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS |