 | | | |
| PartNumber | IRF822FI | IRF822PBF | IRF822R |
| Description | Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF8252PBF | MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC | |
| IRF8252TRPBF | MOSFET MOSFT 25V 25A 2.7mOhm 35nC Qg | ||
| IRF8252TRPBF. | 全新原装 | ||
| IRF822FI | 全新原装 | ||
| IRF822PBF | 全新原装 | ||
| IRF822R | Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF823 | Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF823 H2 | 全新原装 | ||
| IRF823P | 全新原装 | ||
| IRF823PBF | 全新原装 | ||
| IRF8252 | 全新原装 | ||
| IRF8252PBF-1 | 全新原装 | ||
| IRF8252TR | 全新原装 | ||
| IRF8290T | 全新原装 | ||
| IRF8290TR | 全新原装 | ||
Infineon Technologies |
IRF8252TRPBF-1 | MOSFET N-CH 25V 25A | |
| IRF8252TRPBF | MOSFET N-CH 25V 25A 8-SO | ||
| IRF8252PBF | Darlington Transistors MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC |