 | |  | |
| PartNumber | IRFB18N50KPBF | IRFB18N50K | IRFB18N50KPPBF |
| Description | MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3 | MOSFET RECOMMENDED ALT 844-IRFB18N50KPBF | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Rds On Drain Source Resistance | 290 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 120 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 220 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Height | 15.49 mm | 15.49 mm | - |
| Length | 10.41 mm | 10.41 mm | - |
| Series | IRFB | IRFB | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | 4.7 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 6.4 S | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 60 ns | - | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 22 ns | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFB18N50KPBF | MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3 | |
| IRFB18N50K | MOSFET RECOMMENDED ALT 844-IRFB18N50KPBF | ||
| IRFB18N50KPPBF | 全新原装 | ||
| IRFB18N5OK | 全新原装 | ||
Vishay |
IRFB18N50K | MOSFET N-Chan 500V 17 Amp | |
| IRFB18N50KPBF | IGBT Transistors MOSFET N-Chan 500V 17 Amp |