 | | |
| PartNumber | IRFHM830TRPBF | IRFHM830TR2PBF |
| Description | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | MOSFET MOSFT 30V 40A 3.8mOhm |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-8 | PQFN-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 21 A | 21 A |
| Rds On Drain Source Resistance | 4.8 mOhms | 4.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.8 V | 1.8 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 31 nC | 31 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.7 W | 2.7 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 1.05 mm | 1.05 mm |
| Length | 3.3 mm | 3.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - |
| Width | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 52 S | 52 S |
| Fall Time | 9.2 ns | 9.2 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 25 ns | 25 ns |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns | 13 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns |
| Part # Aliases | SP001566782 | SP001560438 |
| Unit Weight | 0.002328 oz | 0.070548 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFHM830TRPBF | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | |
| IRFHM830TR2PBF | MOSFET N-CH 30V 21A PQFN | ||
| IRFHM830TRPBF | MOSFET N-CH 30V 21A PQFN | ||
Infineon / IR |
IRFHM830TR2PBF | MOSFET MOSFT 30V 40A 3.8mOhm | |
| IRFHM830TRPBF-CUT TAPE | 全新原装 |