IRG7S

IRG7S313U vs IRG7S313U G7S313U vs IRG7S313UPBF

 
PartNumberIRG7S313UIRG7S313U G7S313UIRG7S313UPBF
DescriptionIGBT,N CHANNEL,330V,40A,D2PAK, DC Collector Current:40A, Collector Emitter Saturation Voltage Vce(on):2.14V, Power Dissipation Pd:78W, Collector Emitter Voltage V(br)ceo:330V, No. of Pins:3Pins,
ManufacturerIR--
Product CategoryIGBTs - Single--
制造商 型号 描述 RFQ
Infineon / IR
Infineon / IR
IRG7S313UTRLPBF MOSFET 330V 40A D2PAK
Infineon Technologies
Infineon Technologies
IRG7S313UTRLPBF IGBT Transistors MOSFET 330V 40A D2PAK
IRG7S313U 全新原装
IRG7S313U G7S313U 全新原装
IRG7S313UPBF IGBT,N CHANNEL,330V,40A,D2PAK, DC Collector Current:40A, Collector Emitter Saturation Voltage Vce(on):2.14V, Power Dissipation Pd:78W, Collector Emitter Voltage V(br)ceo:330V, No. of Pins:3Pins,
IRG7S313UTRL 全新原装
IRG7SC12FPBF IGBT Transistors 330V 8A D2PAK
IRG7SC28U 全新原装
IRG7SC28UTRLPBF IGBT Transistors 600V 40A IGBT 1.70V 225A
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