 |  |  | |
| PartNumber | IXBN75N170 | IXBN75N170A | IXBN75N120A |
| Description | IGBT Modules 145Amps 1700V | IGBT Transistors 75 Amps 1700V 6.00 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | IGBT Modules | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Package / Case | SOT-227B-4 | SOT-227B-4 | - |
| Packaging | Tube | Tube | - |
| Series | IXBN75N170 | IXBN75N170 | - |
| Brand | IXYS | IXYS | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Product Type | IGBT Modules | IGBT Transistors | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | BIMOSFET | BIMOSFET | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Technology | - | Si | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 1.7 kV | - |
| Collector Emitter Saturation Voltage | - | 4.95 V | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Continuous Collector Current at 25 C | - | 75 A | - |
| Pd Power Dissipation | - | 625 W | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Continuous Collector Current Ic Max | - | 350 A | - |
| Height | - | 9.6 mm | - |
| Length | - | 38.23 mm | - |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Width | - | 25.42 mm | - |
| Continuous Collector Current | - | 75 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXBN75N170 | IGBT Modules 145Amps 1700V | |
| IXBN75N170A | IGBT Transistors 75 Amps 1700V 6.00 Rds | ||
| IXBN75N120A | 全新原装 | ||
| IXBN75N170 | IGBT Modules 145Amps 1700V | ||
| IXBN75N170A | IGBT Transistors 75 Amps 1700V 6.00 Rds |