PartNumber | IXFH46N65X2 | IXFH50N20 | IXFH4N100Q |
Description | MOSFET MOSFET 650V/46A Ultra Junction X2 | MOSFET DIODE Id50 BVdass200 | MOSFET 4 Amps 1000V 2.8 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 200 V | 1 kV |
Id Continuous Drain Current | 46 A | 50 A | 4 A |
Rds On Drain Source Resistance | 76 mOhms | 45 mOhms | 3 Ohms |
Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
Qg Gate Charge | 75 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 660 W | 300 W | 150 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HyperFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | 650V Ultra Junction X2 | IXFH50N20 | IXFH4N100 |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 17 S | 32 S | - |
Fall Time | 6 ns | 16 ns | 18 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | 15 ns | 15 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 47 ns | 72 ns | 32 ns |
Typical Turn On Delay Time | 34 ns | 18 ns | 17 ns |
Unit Weight | 0.056438 oz | 0.229281 oz | 0.229281 oz |
Height | - | 21.46 mm | 21.46 mm |
Length | - | 16.26 mm | 16.26 mm |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 5.3 mm | 5.3 mm |
制造商 | 型号 | 描述 | RFQ |
---|---|---|---|
Littelfuse |
IXFH46N65X2 | MOSFET MOSFET 650V/46A Ultra Junction X2 | |
IXFH60N50P3 | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | ||
IXFH52N50P2 | MOSFET PolarP2 Power MOSFET | ||
IXFH50N50P3 | MOSFET N-Channel: Power MOSFET w/Fast Diode | ||
IXFH52N30Q | MOSFET 300V 52A | ||
IXFH50N60P3 | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | ||
IXFH52N30P | MOSFET 52 Amps 300V 0.066 Rds | ||
IXFH50N85X | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | ||
IXFH50N30Q3 | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | ||
IXFH56N30X3 | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | ||
IXFH60N60X | MOSFET DISCMSFT NCH ULTRJNCTN XCLASS | ||
IXFH50N60X | MOSFET DISCMSFT NCH ULTRJNCTN XCLASS | ||
IXFH50N20 | MOSFET DIODE Id50 BVdass200 | ||
IXFH58N20 | MOSFET 200V 58A | ||
IXFH4N100Q | MOSFET 4 Amps 1000V 2.8 Rds | ||
IXFH67N10 | MOSFET 67 Amps 100V | ||
IXFH60N20 | MOSFET 60 Amps 200V 0.033 Rds | ||
IXFH46N65X2 | MOSFET N-CH 650V 46A TO-247 | ||
IXFH46N65X2/SPW47N60C3 | 全新原装 | ||
IXFH48N50 | 全新原装 | ||
IXFH4N100 | 全新原装 | ||
IXFH4N100Q2 | 全新原装 | ||
IXFH4N100QZ | 全新原装 | ||
IXFH50N20P | 全新原装 | ||
IXFH50N50P3 | MOSFET N-CH 500V 50A TO-247 | ||
IXFH50N85X | 850V/50A ULTRA JUNCTION X-CLASS | ||
IXFH52N30P3 | 全新原装 | ||
IXFH58N20 + | 全新原装 | ||
IXFH60N20F | MOSFET | ||
IXFH60N60X2 | 全新原装 | ||
IXFH60N65X2 | MOSFET N-CH 650V 60A TO-247 | ||
IXFH65N06 | 全新原装 | ||
IXFH50N30Q3 | MOSFET N-CH 300V 50A TO-247 | ||
IXFH50N60P3 | MOSFET N-CH 600V 50A TO247 | ||
IXFH50N60X | MOSFET N-CH 600V 50A TO247 | ||
IXFH56N30X3 | 300V/56A ULTRA JUNCTION X3-CLASS | ||
IXFH60N60X | MOSFET N-CH 600V 60A TO247 | ||
IXFH60N65X2-4 | MOSFET N-CH | ||
IXFH50N20SP | 全新原装 | ||
IXFH52N50P2 | Darlington Transistors MOSFET PolarP2 Power MOSFET | ||
IXFH58N20Q | MOSFET 200V 58A | ||
IXFH58N20 | MOSFET 200V 58A | ||
IXFH50N20 | MOSFET DIODE Id50 BVdass200 | ||
IXFH52N30Q | MOSFET 300V 52A | ||
IXFH60N25Q | MOSFET 60 Amps 250V 0.047 Rds | ||
IXFH60N20 | MOSFET 60 Amps 200V 0.033 Rds | ||
IXFH66N20Q | MOSFET 66 Amps 200V 0.04 Rds | ||
IXFH4N100Q | MOSFET 4 Amps 1000V 2.8 Rds | ||
IXFH60N50P3 | IGBT Transistors MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | ||
IXFH52N30P | IGBT Transistors MOSFET 52 Amps 300V 0.066 Rds |