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| PartNumber | MRF10120 | MRF101AN | MRF101AN-230MHZ |
| Description | RF Bipolar Transistors | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V | MRF100AN REFERENCE BRD - 233MHZ |
| Manufacturer | MACOM | NXP | - |
| Product Category | RF Bipolar Transistors | RF MOSFET Transistors | - |
| Transistor Type | Bipolar Power | - | - |
| Technology | Si | Si | - |
| Transistor Polarity | NPN | N-Channel | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Collector Emitter Voltage VCEO Max | 55 V | - | - |
| Emitter Base Voltage VEBO | 3.5 V | - | - |
| Continuous Collector Current | 15 A | - | - |
| Minimum Operating Temperature | - 65 C | - 40 C | - |
| Maximum Operating Temperature | + 200 C | + 150 C | - |
| Configuration | Single | - | - |
| Package / Case | 355C-2 | TO-220-3 | - |
| Operating Frequency | 1.215 GHz | 1.8 MHz to 250 MHz | - |
| Type | RF Bipolar Power | RF Power MOSFET | - |
| Brand | MACOM | NXP Semiconductors | - |
| Pd Power Dissipation | 380 W | 182 W | - |
| Product Type | RF Bipolar Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 20 | 250 | - |
| Subcategory | Transistors | MOSFETs | - |
| Id Continuous Drain Current | - | 8.8 A | - |
| Vds Drain Source Breakdown Voltage | - | 133 V | - |
| Gain | - | 21.1 dB | - |
| Output Power | - | 100 W | - |
| Mounting Style | - | Through Hole | - |
| Packaging | - | Tube | - |
| Series | - | MRF101 | - |
| Forward Transconductance Min | - | 7.1 S | - |
| Number of Channels | - | 1 Channel | - |
| Vgs Gate Source Voltage | - | - 6 V, + 10 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.7 V | - |
| Part # Aliases | - | 935377233129 | - |