 |  | | |
| PartNumber | MT3S113(TE85L,F) | MT3S113(TE85LF)CT-ND | MT3S113 |
| Description | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW | ||
| Manufacturer | Toshiba | - | TOSHIBA |
| Product Category | RF Bipolar Transistors | - | IC Chips |
| RoHS | Y | - | - |
| Series | MT3S113 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Collector Emitter Voltage VCEO Max | 5.3 V | - | - |
| Emitter Base Voltage VEBO | 0.6 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-236-3 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 12.5 GHz | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
MT3S113P(TE12L,F) | RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W | |
| MT3S113TU,LF | RF Bipolar Transistors RF Bipolar Transistor .1A 900mW | ||
| MT3S113(TE85L,F) | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW | ||
| MT3S113TULF | Trans RF BJT NPN 5.3V 0.1A 3-Pin UFM - Tape and Reel (Alt: MT3S113TU,LF) | ||
| MT3S113(TE85LF)CT-ND | 全新原装 | ||
| MT3S113(TE85LF)DKR-ND | 全新原装 | ||
| MT3S113(TE85LF)TR-ND | 全新原装 | ||
| MT3S113P(TE12LF)CT-ND | 全新原装 | ||
| MT3S113P(TE12LF)DKR-ND | 全新原装 | ||
| MT3S113P(TE12LF)TR-ND | 全新原装 | ||
| MT3S113TULFCT-ND | 全新原装 | ||
| MT3S113TULFDKR-ND | 全新原装 | ||
| MT3S113TULFTR-ND | 全新原装 | ||
| MT3S113 | 全新原装 | ||
| MT3S113P | 全新原装 | ||
| MT3S113TU | 全新原装 | ||
| MT3S113TU , MAX6707SKA | 全新原装 | ||
| MT3S113TU(TE85L) | 全新原装 | ||
| MT3S113TU,LF(T | 全新原装 | ||
| MT3S113TULF(T | 全新原装 |