 |  |  | |
| PartNumber | NE350184C | NE3503M04-A | NE3503M04-T2-A |
| Description | RF JFET Transistors Low Noise HJ FET | RF JFET Transistors Low Noise HJ FET | |
| Manufacturer | CEL | CEL | NEC |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF FETs |
| RoHS | Y | Y | - |
| Transistor Type | HFET | HFET | HFET |
| Technology | GaAs | GaAs | GaAs |
| Gain | 13.5 dB | 12 dB | 12 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 4 V | 4 V | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - 3 V | - |
| Id Continuous Drain Current | 70 mA | 70 mA | - |
| Maximum Operating Temperature | + 150 C | + 125 C | + 125 C |
| Pd Power Dissipation | 165 mW | 125 mW | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | Micro-X | FTSMM-4 (M04) | - |
| Packaging | Bulk | - | Reel |
| Operating Frequency | 20 GHz | 12 GHz | 12 GHz |
| Product | RF JFET | RF JFET | - |
| Type | GaAs HFET | GaAs HFET | - |
| Brand | CEL | CEL | - |
| Forward Transconductance Min | 40 mS | 55 mS | - |
| Gate Source Cutoff Voltage | - 2 V | - 0.7 V | - |
| NF Noise Figure | 0.7 dB | 0.45 dB | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 30 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Package Case | - | - | FTSMM-4 (M04) |
| Pd Power Dissipation | - | - | 125 mW |
| Id Continuous Drain Current | - | - | 70 mA |
| Vds Drain Source Breakdown Voltage | - | - | 4 V |
| Forward Transconductance Min | - | - | 55 mS |
| Vgs Gate Source Breakdown Voltage | - | - | - 3 V |
| NF Noise Figure | - | - | 0.45 dB |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
CEL |
NE3509M04-A | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | |
| NE3508M04-EVNF23-A | RF Development Tools L to S band LNA Eval Brd | ||
| NE350184C | RF JFET Transistors Low Noise HJ FET | ||
| NE3509M04-EVNF24-A | RF Development Tools For NE3509M04-A | ||
| NE3503M04-A | RF JFET Transistors Low Noise HJ FET | ||
| NE3503M04-T2-A | 全新原装 | ||
| NE3508M04-T2-A | 全新原装 | ||
| NE3503M04-A | RF JFET Transistors Low Noise HJ FET | ||
| NE3509M04-A | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | ||
| NE3508M04-A | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | ||
| NE3509M04-T2-A | 全新原装 | ||
| NE350184C | FET RF 4V 20GHZ MICRO-X | ||
| NE3503M04-T2B-A | FET RF 4V 12GHZ M04 | ||
| NE3509M04-EVNF24-A | EVAL DEV RF NE3509M04 | ||
| NE3503M04T2A | 全新原装 | ||
| NE350184C-T1 | RF JFET Transistors Low Noise HJ FET | ||
| NE350184C-T1-A | 全新原装 | ||
| NE350184C-T1A | RF JFET Transistors Low Noise HJ FET | ||
| NE3503-M04 | 全新原装 | ||
| NE3503/EHX77Z1BT | 全新原装 | ||
| NE3503M04 | 全新原装 | ||
| NE3503M04 V75 | 全新原装 | ||
| NE3503M04-T1-A | 全新原装 | ||
| NE3503M04-T2 | 全新原装 | ||
| NE3503M04-T2 , ELM99501A | 全新原装 | ||
| NE3503M04-T2B-A/JT | 全新原装 | ||
| NE3503MO4-T2 | 全新原装 | ||
| NE3505M04 | 全新原装 | ||
| NE3505M04-T2 , EM-0711 | 全新原装 | ||
| NE3508M04 | 全新原装 | ||
| NE3508M04-A-ND | 全新原装 | ||
| NE3508M04-T1-A | 全新原装 | ||
| NE3508M04-T2 | 全新原装 | ||
| NE3508M04-T2-A/79 | 全新原装 | ||
| NE3508M04T2A | 全新原装 | ||
| NE3509M04-T1-A | 全新原装 | ||
| NE3509M04-T2 | 全新原装 | ||
| NE3509M04-T2-A/80 | 全新原装 | ||
| NE350184C-T1A(PB) | 全新原装 | ||
| NE3505M04-T2-A | 全新原装 | ||
| NE3503M04-T2B | 全新原装 | ||
| NE3505M04-T2 | 全新原装 | ||
| NE3509M04 | 全新原装 |