NE3509M04-T

NE3509M04-T2-A vs NE3509M04-T1-A vs NE3509M04-T2

 
PartNumberNE3509M04-T2-ANE3509M04-T1-ANE3509M04-T2
Description
ManufacturerNEC--
Product CategoryRF FETs--
PackagingReel--
Mounting StyleSMD/SMT--
Package CaseFTSMM-4 (M04)--
TechnologyGaAs--
Transistor TypeHFET--
Gain17.5 dB--
Pd Power Dissipation150 mW--
Maximum Operating Temperature+ 150 C--
Operating Frequency2 GHz--
Id Continuous Drain Current60 mA--
Vds Drain Source Breakdown Voltage4 V--
Transistor PolarityN-Channel--
Forward Transconductance Min80 mS--
Vgs Gate Source Breakdown Voltage- 3 V--
NF Noise Figure0.4 dB--
P1dB Compression Point11 dBm--
制造商 型号 描述 RFQ
CEL
CEL
NE3509M04-T2-A 全新原装
NE3509M04-T1-A 全新原装
NE3509M04-T2 全新原装
NE3509M04-T2-A/80 全新原装
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