 |  | | |
| PartNumber | NE3512S02-T1C-A | NE3512S02-T1B | NE3512S02-T1C |
| Description | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | ||
| Manufacturer | CEL | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HFET | - | - |
| Technology | GaAs | - | - |
| Gain | 13.5 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 4 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| Id Continuous Drain Current | 70 mA | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Pd Power Dissipation | 165 mW | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | S0-2 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 12 GHz | - | - |
| Product | RF JFET | - | - |
| Type | GaAs HFET | - | - |
| Brand | CEL | - | - |
| Forward Transconductance Min | 55 mS | - | - |
| NF Noise Figure | 0.35 dB | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
CEL |
NE3512S02-T1C-A | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | |
| NE3512S02-T1C-A | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | ||
| NE3512S02-T1D-A | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | ||
| NE3512S02-T1D-AJT | 全新原装 | ||
| NE3512S02-T1B | 全新原装 | ||
| NE3512S02-T1C | 全新原装 | ||
| NE3512S02-T1 | 全新原装 | ||
| NE3512S02-T1D | 全新原装 | ||
| NE3512S02-T1D-A/JT | 全新原装 |